| PART |
Description |
Maker |
| AP2120N-1.8TRG1 AP2120N-2.5TRG1 AP2120N-5.0TRG1 AP |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
Diodes
|
| AP2129K-1.0TRG1 AP2129K-1.2TRG1 AP2129K-3.3TRG1 AP |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
|
BCD Semiconductor Manufacturing Limited
|
| AGP2125K-2.8TRG1 AP2125KS-2.5TRE1 AP2125KS-2.5TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
|
Diodes
|
| SP6260BEK-L/TR SP6260DEK-L/TR SP6260FEK-L/TR |
High Speed, Extremely Low Noise 150mA LDO Regulator 高速，超低噪声150mALDO稳压
|
Exar, Corp.
|
| AP212909 AP2129K-ADJTRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
|
BCD Semiconductor Manufacturing Limited
BCD Semiconductor Manuf...
|
| P500-G200-WH P850-G200-WH P850-G120-WH P500-G120-W |
Extremely high speed performance
|
Bourns Electronic Solutions
|
| P40-G |
Extremely high speed performance
|
Bourns Electronic Solutions
|
| SI2301 |
High dense cell design for extremely low RDS(ON)
|
MAKO SEMICONDUCTOR CO.,...
|
| CES2310 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| CES2313 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| FDN327N |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
